Plasma treatment device

ABSTRACT

In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.

TECHNICAL FIELD

The present invention relates to a plasma treatment device and a plasmaprocessing method for use in the manufacture of substrates and the likewhich can be used in semiconductors and liquid crystal displays, andmore particularly, it relates to a plasma treatment device and a plasmaprocessing method suitable for treatments such as etching and filmformation.

BACKGROUND ART

With the large scale integration of semiconductor devices, theenlargement of diameters of semiconductor wafers and the increase ofareas of liquid crystal displays, the requirements of a treatment devicefor carrying out etching processing and film formation processing on thesemiconductors become severe year by year. Also with regard to a plasmatreatment device such as a plasma etching apparatus, a plasma CVDapparatus and a plasma ashing apparatus, the above situations aresimilar. That is to say, in order to improve a throughput, the increaseof the density of plasma and the enlargement of the area of workpiecesto be processed as well as the realization of cleaning have becomeimportant themes.

As plasma sources for use in the above-mentioned plasma treatmentdevice, there are a radio-frequency capacitively coupled plasma source,a microwave ECR plasma source, a radio-frequency inductively coupledplasma source and the like, and they are used separately in treatmentprocess to make the best use of the characteristics of each plasmasource. Among these three plasma sources, plasma treatment devicesprovided with the radio-frequency inductively coupled plasma source haverapidly come into wide use in recent years.

One example of the inductively coupled plasma treatment device isdisclosed in Japanese Patent Unexamined Publication No. 2-235332. Inthis inductively coupled plasma treatment device, a high-frequencyelectric power on the order of several hundred kHz to several hundredMHz is fed to a loop, coil, or spiral-shape antenna which is placed onthe outside of the processing chamber via an insulator such as quartzforming part of the chamber, and an induced electric field formed by theantenna supplies energy to a process gas introduced into the processingchamber to generate and maintain a plasma.

There is a case of providing an antenna inside the chamber of the plasmatreatment device of the radio-frequency inductively coupled plasma. Forexample, Japanese Patent Unexamined Publication No. 7-106095 describes acase where a spiral-shape antenna which is a RF induction coil is set upat a position facing semiconductor wafers which is a workpiece in thechamber. In these RF inductively coupled plasma treatment devices, aninduction current is generated in the plasma and the plasma and thehigh-frequency antenna are inductively coupled in terms of electriccircuit (a transformer circuit which treats the antenna as the primarycoil and the current in the plasma as the secondary coil). Therefore,this is called the inductively coupled plasma treatment device.

The advantages of the plasma treatment device of the inductively coupledplasma are: (1) in a simple and low-cost construction of a simpleantenna and a radio-frequency electric power source, a plasma ofrelatively high density of 10¹¹ to 10¹² (piece/cm³) can be generatedunder a low pressure of a few mTorr; (2) by arranging a coil in a planarmanner facing the workpiece, a large-area plasma can be easilygenerated; and (3) because of the simple interior of the processingchamber, particles flying over the workpiece during processing can bereduced.

In such an inductively coupled plasma treatment device, a plasma of highdensity under low pressure is generated and the mean free path of ionsbecomes long. This makes it possible to true up the directions of ionsincident upon the workpiece and a high processing rate and fine workingcan be obtained.

DISCLOSURE OF THE INVENTION

In the plasma treatment device described in the foregoing JapanesePatent Unexamined Publication No. 2-235332, a high-induction antenna isarranged on an atmosphere side via an insulator such as quartz withrespect to a plasma in the processing chamber. As a result, theinsulator must have sufficient strength to withstand atmosphericpressure, and in view of the current condition where a workpieceoccupies a large area, it is necessary for the insulator to be madethick corresponding to the area of the workpiece.

It is also pointed out that the antenna and the plasma are capacitivelycoupled in addition to inductive coupling. And it frequently happensthat the insulator is chipped by plasma. As a result, it is necessary tothicken the insulator in order to increase reliability sufficiently.When the insulator is made thick, as described in the paper by Kelleret. al reported in Journal of Vacuum Science All (5), September/October1993, p. 2487, the plasma generation efficiency greatly drops, givingadverse effects on plasmas ignitability and stability.

On the other hand, in the plasma treatment device disclosed in JapanesePatent Unexamined Publication No. 7-106095, the antenna is installedinside the chamber, so that the above-mentioned problem of generationefficiency can be solved to some extent. Nevertheless, new disadvantagesas described hereinafter will occur.

Although the surface of the inductive antenna is protected by insulatingmaterials, a strong plasma is normally generated around the antenna incase of the inductively coupled plasma apparatus. Therefore, damage tothe protective film is extremely large in the apparatus such as a plasmaetching apparatus using reactive gases. The antenna itself is made ofmetal, thus generating metallic ions when the protective film is brokenand causing metallic contamination in the semiconductor wafers. Also,the antenna itself would need to be exchanged, necessitating a greatdeal of time and cost for maintenance. These are the disadvantages thatwould appear.

Further, there is another defect. Behind the antenna, there is installeda cooling plate which must be insulated against the antenna. In suchconstruction, it is difficult for the cooling plate to be thermally putinto close contact with the antenna. Under low pressure such as invacuum or during plasma processing, heat transfer at the contact surfaceof structures is extremely poor, so that the cooling effect on theantenna by means of the cooling plate cannot be expected too much.

There is an additional disadvantage. Behind the antenna installed on theopposite side of the workpiece, there is also generated a plasma of ashigh density as that on the workpiece side. Since the plasma behind theantenna is not effectively used for plasma processing of the workpiece,the real plasma generation efficiency decreases and, at the same time,the chamber wall behind is subjected to the strong plasma.

The present invention is made to solve the abovementioned problems anddisadvantages of conventional arts. Namely, it is the object of thepresent invention to provide a plasma treatment device which cangenerate a stable plasma with high efficiency under wider operatingconditions by solving the problems of the plasma generation efficiencyin case of the plasma treatment device where the induction antenna isinstalled on the atmosphere side, and the problems of surface protectionand cooling of the induction antenna as well as the problem of adecrease in efficiency due to plasma generation behind the antenna incase of the plasma treatment device installed inside the processingchamber. It is another object of the present invention to provide aplasma treatment device which has high reliability with ease ofmaintenance.

A first embodiment of the present invention to accomplish the foregoingobjects is that the foregoing problems can be solved by building theinduction antenna as an integral part of the chamber inside theprocessing chamber. The antenna to which a high-frequency power is fedis insulated with an insulating material of proper thickness against thechamber, and to protect it from the plasma or reactive gases forprocessing plasma, the surface in contact with the plasma is coveredwith the insulating material such as alumina or quartz. The antenna isin contact with the plasma via the insulating material. In the presentinvention, since the processing chamber part bears atmospheric pressure,contrary to a quartz window of the insulating material used for theprior-art plasma treatment device where induction coils are placed onthe atmosphere side, this insulating material has no need of bearingatmospheric pressure, so that it can be made thin. For the insulatingmaterial to have a thickness unable to withstand atmospheric pressure,it is desirable not to make a gap between the antenna and itssurrounding insulating material or to keep the pressure of this gap partclose to the pressure inside the processing chamber. In fact, micro gapsor contact surfaces may structurally occur between the insulatingmaterial and the antenna. But as explained in the prior-art section,under low pressure, this part has a poor heat transfer causing a problemof heating the antenna. To solve this problem, for example, by makingsuch a structure as to introduce a non-reactive gas such as He gas onthe level of few Torr into the gaps surrounding the antenna, theantennas heat is allowed to escape to the adjacent insulating materialwhich directly or indirectly is cooled. As a result, the antenna heatingproblem can be solved. And it is not necessary to make the insulatingmaterial between the plasma and the antenna thick for the pressure ofthis level.

The plasma treatment device of the present invention contributes toincreasing the plasma generation efficiency and generating a stableplasma under a wider range of operating conditions. Moreover, even ifthe insulating material protecting the antenna should be chipped andreduced, only the insulating material needs to be replaced, thusimproving maintenance performance as compared with the prior-artantenna. Consequently, plasma processing performance and the operatingrate of the device will be improved and it becomes possible to performfine etching process with high throughput, high quality film deposition,and surface treatment.

Other objects and advantageous effects of the present invention will beapparent from the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of an embodiment of the plasma treatmentdevice according to the present invention, showing a longitudinalsectional view of the main part.

FIG. 2 is an exploded perspective view of an antenna portion.

FIG. 3 is an enlarged schematic view of the vicinities of the antenna.

FIG. 4 is a schematic view of another embodiment of the plasma treatmentdevice according to the present invention, showing a longitudinalsectional view of the main part.

FIG. 5 to FIG. 8 are schematic views of further embodiments of theplasma treatment device according to the present invention, showinglongitudinal sectional views of the main part.

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 shows an embodiment of the plasma treatment device of the presentinvention. A processing chamber 3 is, for example, an aluminum-madevacuum vessel with its surface treated with Alumite and is electricallyearthed. At the bottom of the processing chamber 3, vacuum exhaust means6 to suck gas inside the chamber is installed, while at its side, aconveyor system 5 is set up to convey a semiconductor wafer 1, aworkpiece, into and out of the chamber. In the processing chamber 3,there is installed an electrode 2 to mount the semiconductor wafer 1.The semiconductor wafer 1 having been conveyed by the carrier system 5into the process chamber is moved above an electrode 2 by a pushrod 13disposed approximately at the center of the electrode, and thereafter itis stuck electrostatically by an electrostatic chuck 16 which isconnected to a DC power source 24 and provided in the electrode 2, andits horizontal position and vertical position are held. The electrode 2is formed of metallic materials such as aluminum or stainless steel. Theelectrostatic chuck 16 comprises, for example, a dielectric substancesuch as alumina mixed with silicon carbide or titanium oxide which isformed at a thickness of approximately 1 mm on top of the aluminumelectrode. When a voltage of several hundred volts is impressed on theelectrostatic chuck 16, the semiconductor wafer 1 is electrostaticallystuck to the electrostatic chuck 16. Also, to control energy of ionsincident on the semiconductor wafer 1 during plasma processing, aradio-frequency power source 12 with frequencies of several hundred KHzto several tens of MHz is connected to the electrode 2 via a matchingdevice 11. Further, inside the electrode 2 is formed a refrigerantpassage 15 through which a refrigerant for cooling runs to keep thetemperature of the wafer heated by the plasma during processing at aconstant.

Between the wafer 1 and the electrode 2, to promote heat transfer on thecontact surface under low pressure, a non-reactive gas such as He of afew Torr to ten and several Torr is introduced through a flow passage14. The surface of the electrode other than the wafer mounting surfaceis protected from the plasma and the non-reactive gas by means of asuscepter 17 and a cover 18 or the like.

On the other hand, at the upper position inside the chamber facing thewafer, an induction antenna system, a characteristic construction of thepresent invention, is installed. A spiral antenna 9 is grasped byinsulating materials 25 a, 25 b, and 25 c of alumina ceramics or thelike and horizontally placed at the opposite side of the wafer 1. Acenter of the antenna 9 is connected to a current introducing terminal30 to which are connected a matching device 7, then a high-frequencypower source 8. Frequency of the high-frequency power source 8 is notparticularly limited, but generally several hundred kHz to severalhundred MHz, and 13.56 MHz which is the commercial frequency is the mostpractical. On the underside of the insulating material 25 b, formed is agroove corresponding to the shape of the antenna to house the antenna 9,while on the upper side thereof formed is a duct 26 for running therefrigerant.

On the underside of the insulating material 25 a grasping the antenna 9there is provided a Faraday shield 28 as shown in the explodedperspective view of FIG. 2. The Faraday shield 28 comprises a thinmetallic sheet with slits being radially formed thereon and is connectedto a current introducing terminal 40 which is connected to a switch 39placed outside a vessel One end of the switch 39 is electricallyearthed. The shield 28 is for preventing the antenna 9 and a plasma 4from capacity coupling in terms of electric circuit, and prevents aninsulating cover 29 comprising quartz or the like from being chipped andreduced. The switch 39 is provided to solve the problem of plasmaignition. Namely, to prevent the insulating cover 29 from being chipped,capacitive coupling between the antenna and the plasma must beprevented. On the other hand, when the plasma is first ignited, thiscapacitive coupling is needed. Accordingly, before the plasma isignited, the switch 39 is turned off and the shield plate 28 is made tofloat from the earth. After ignition of the plasma, the switch 39 isturned on to let the shield function as the shield. Thus, both functionsof preventing the cover material from being chipped and ignitability aresecured.

In generally available plasma etching systems, radio frequency electricpower is impressed on an electrode holding a wafer to cause a bias ofnegative potential on the wafer. However, distribution of this bias onthe wafer surface is often non-uniform. This non-uniformity can besolved by setting up a firm earth at a position opposite to the wafer 1,but the shield plate 28 also functions as this opposite earth, andtherefore, a uniform bias can be applied to the wafer.

Substantially at the center of the insulating cover 29 covering theunderside of the antenna 9, there is formed a blow out port 31 for theprocessing gas. The processing gas is introduced from a processing gasintroducing pipe 10 attached to the side of the chamber through a spacebetween the insulating material 25 a and the cover sheet 29 into thechamber 3 in the form of shower. It is desirable for the insulatingmaterials 25 a, 25 b, and 25 c and the antenna 9 to be built completelyin one structure. However, because the dimensional accuracy ofprocessing alumina ceramics cannot be made in high level at low cost andbecause the thermal expansions of the metal and ceramics are different,a gap of the order of at least 0.1 mm is produced between the antenna 9and the insulating material 25 b. As a result, heat transfer in thevicinity of this gap drops, so that the heat generated in the antenna 9barely escapes to the refrigerant flow passage 26. In this embodiment,to promote heat transfer, in the same way as the case between theelectrode 2 and the wafer 1, a non-reactive, heat-transfer promoting gaswhich may be one of the rare gases contained in gas supply means 37 suchas He, Ar, and Xe as well as Nitrogen gas is introduced into the gapbetween the antenna 9 and the insulating material 25 b in the quantityof a few Torr.

As described above, to increase the plasma generation efficiency, it isnecessary to shorten the distance between the antenna 9 and the plasma4. Hence, the thickness of the insulating material 25 a is thin and theinsulating material cannot withstand atmospheric pressure. However, ifit has a thickness of a few milimeters, it can sufficiently take thepressure of a few Torr, although there is a possibility that theinsulating material 25 a may break down if a pressure differentialbetween the pressure around the antenna and that of the processingchamber increases as a result of opening of the chamber to theatmosphere or a sudden occurrence of trouble. Consequently, pressuregauges 33 and 34 are used to monitor the above-mentioned pressures atall times. When a predetermined pressure differential occurs, a safetycircuit 32 opens a valve 35 to cancel out the pressure differential. Inthis embodiment, the supply means 37 for feeding the refrigerants 27 aand 27 b for the antenna and the non-reactive gas is provided separatelyfrom the supply means 23 for feeding the refrigerants 19 a and 19 b forthe electrode and the non-reactive gas. However, these supply means maybe made common with each other to decrease the cost of the treatmentdevice as a whole. Note that a mass flow meter 20 and a valve 21 forregulating the flow rate, a pressure gauge 22 for detecting linepressure or the like are connected to the supply means 23. Likewise, amass flow meter 38 and a valve 36 are connected to the gas supply means37.

FIG. 3 shows an enlarged schematic view of the vicinities of theantenna. Heat 45 generated by the antenna 9 is conveyed to theinsulating material 25 b by heat transfer 37 a which is introduced to anantenna part and the heat-transfer promoting gas 37 b which fills up thegap, and conveyed through the refrigerant flow passage 26 to theoutside. This space (gap) is hermetically formed with respect to theatmosphere and a plasma generating space, and the plasma generatingspace is formed by sealing the insulating material 25 a by means of0-ring. Since the heat-transfer promoting gas, if in small quantities,will not affect plasma processing, the hermetic arrangement is notalways necessary with respect to the plasma generating space. Althoughnot illustrated herein, grooves are formed on the surface of theinsulating materials so that the gas can be sufficiently conveyed to theinsulating materials 25 a and 25 b.

Secondary effects are brought about by using the heat-transfer promotinggas. For example, in etching process, the temperature of the chamber isone of the important parameters; especially, the temperature of the faceopposite to the wafer gives a strong effect on etching. Therefore, asshown in FIG. 1, the cover material 29 facing the wafer is provided withtemperature detecting means 41 to monitor the surface temperature. Thetemperature detected by the temperature detecting means 41 is fed backto the pressure of the heat-transfer promoting gas and the flow rate ofthe refrigerant, thereby regulating the temperature of the covermaterial 29.

Furthermore, instead of introducing the non-reactive gas on the order ofa few Torr around the antenna, there are other measures, for example,filling up the gap between the antenna 9 and the insulating material 25b with a liquid such as silicon grease or a viscous matter or pluggingup the gap with an epoxy resin of high thermal conductivity or the like.Yet, the materials which can be used in the field of semiconductorproduction are limited.

A second embodiment of the present invention is shown in FIG. 4. In thisembodiment, the spiral antenna 9 is formed in the shape of a tube andfluid for direct cooling is run the antenna. A construction in thismanner will contribute to increasing the antenna cooling efficiency,while there is a need to run the refrigerant in the antenna on which ahigh-frequency power is impressed, thus causing a possibility of adecrease in reliability due to generation of corrosion.

Now, in the embodiment shown in FIG. 1, it is necessary to properly setthe thickness of the insulating materials 25 b and 25 c provided on theantenna 9. When there is a metallic processing chamber wall in the rangeof a fluctuating magnetic field formed by the antenna 9, electrons inthe plasma are supplied with energy from a high-frequency power sourceon account of inductive effect of the antenna to be heated. However, aninductive current is generated also in the metal of the chamber and thisconsumes power, so that the generation efficiency decreases.

Further, in the plasma treatment device disclosed in the above-mentionedJapanese Patent Unexamined Publication No. 7-106095, plasma is generatedalso behind the antenna, so that it is not necessary to be concernedwith a distance between the antenna and the chamber behind it. However,it is highly possible that the plasma generated behind the antenna maynot be used effectively for processing the workpiece, and the plasmageneration efficiency will materially decrease as a result of generationof wasteful plasma. According to an experiment by the inventors of thepresent invention, it has been found that at least the distance betweenthe antenna and the chamber must be larger than the distance between theantenna and the plasma, preferably more than double. That is, it isdesirable for a distance from the underside of the antenna 9 to theunderside of the cover 29 to be over twice a distance from the upperside of the antenna 9 to inside the upper part of the chamber 3.

In FIG. 5, another embodiment of the present invention is shown. In thisembodiment, because the upper part of the antenna 3 is made up of theinsulating material 25 c, a decrease in the plasma generation efficiencyresulting from the above-mentioned metal forming the chamber iscancelled out. This makes it unnecessary to be concerned with thethickness of the insulating material on the upper part of the antenna 9and the device can be made compact.

In FIG. 6, a still another embodiment of the present invention is shown.In this embodiment, the antenna comprises two one-turn coil antennas 9 band 9 a arranged on the inside and the outside. A high-frequency poweris fed to the antennas. Matching circuit 7 capable of distributing powerproperly to the respective antennas 9 a and 9 b is provided. Thematching circuit 7 changes the feed ratio to the antennas 9 b and 9 aarranged on the inside and the outside of one another and controls aplasma distribution. Moreover, in this embodiment, it is possible tomake the changeover of earth/non-earth with respect to the shield plate28. Also, the shield plate 28 can be connected to a high-frequencycurrent 43 or a DC power source 44. By impressing these forms of poweron the shield plate 28, there is an effect of plasma-cleaning ofreaction products deposited on the surface of the cover material 29.

In FIG. 7, a further embodiment of the present invention is shown. Inthis embodiment, a coil-shape antenna 9 is mounted on one side of thechamber. Consequently, the cover 29, the shield 28 or the like is formedin the shape of a tube and yet there is obtained the same effect as thecase of installing it at a position opposite the wafer as shown in FIG.1. However, to hold the symmetry of gas flow, it is desirable to set upthe blow out port 31 of the process gas at a position opposite to thewafer.

In FIG. 8, a still further embodiment of the present invention is shown.In this embodiment, the inductively coupled plasma treatment device willbe described, and the same can be applied to the plasma treatment deviceof the electromagnetic wave radiation type from the antenna using highfrequency such as microwaves.

In FIG. 8, a high-frequency power of several hundred MHz to a few GHz isfed from a magnetron 51 through a wave guide tube 53, a coaxialconverter 52 and a coaxial line 54 to the antenna 9. From the antenna 9,electromagnetic waves are radiated and a magnetic field coil 49 providedon the side of the antenna 9 and a subsidiary coil 50 provided underthis magnetic field coil form a static magnetic field. Plasma isgenerated by the interaction of the above-mentioned electromagneticwaves and this static electromagnetic field. A structure adjacent to theantenna is substantially the same as the embodiment shown in FIG. 1 butsince it is not the inductively coupled plasma treatment device, theFaraday shield 29 is omitted. The present invention can be fully appliedto a plasma treatment device so long as the device uses an antenna eventhough it is based on totally different principles from the inductivelycoupled plasma.

As described above, the embodiments of the present invention have beenshown by taking the plasma etching device for manufacturingsemiconductor devices as an example. The present invention is notlimited to the plasma etching device but applicable to the plasma CVDdevice, the plasma ashing device, the plasma sputtering device or thelike. Further, it can be applied to not only processing of semiconductordevices but also processing of liquid crystal display substrates andwhole surface treatment. Still further, the plasma generation system isnot limited to the plasma apparatus of the inductive coupling type. Solong as the plasma generation method of the type where electromagneticwaves are radiated from the antenna is concerned, the present inventionis applicable to a variety of devices.

Preferred embodiments described in this specification are illustrativeand not restrictive. The scope of the invention is shown by the appendedclaims, and all changes and modifications that fall within the meaningof these claims are contained in the present invention.

What is claimed is:
 1. A plasma treatment device, comprising ahermetically sealed processing chamber, gas introducing means forintroducing a processing gas, attached to the processing chamber,exhaust means for exhausting the processing gas introduced into saidprocessing chamber, mounting means for mounting a workpiece, disposed insaid processing chamber, and power source means for supplying power forplasma generation, characterized in that antenna means for plasmageneration is connected to said power source means, and said antennameans is covered with an insulating material integrated with saidprocessing chamber, wherein said antenna means includes first and secondantennas, and each of said first and second antennas is connected tosaid power source means.
 2. The plasma treatment device according toclaim 1, wherein each of said first and second antennas includes aone-turn coil.
 3. A plasma treatment device, comprising a hermeticallysealed processing chamber, gas introducing means for introducing aprocessing gas, attached to the processing chamber, exhaust means forexhausting the processing gas introduced into said processing chamber,mounting means for mounting a workpiece, disposed in said processingchamber, and power source means for supplying power for plasmageneration, characterized in that an antenna for plasma generation isconnected to said power source means, and the antenna is covered with aninsulating material integrated with said processing chamber, wherein ashield plate comprising a conductive material is arranged between saidantenna and a plasma generating space, and wherein changing means forchanging earth and non-earth of said shield plate is provided.
 4. Theplasma treatment device according to claim 3, wherein an insulatingmaterial having a thickness at least larger than a distance between theantenna and a plasma generating position is disposed between saidprocessing chamber and said antenna.
 5. The plasma treatment deviceaccording to claim 3, wherein said antenna is arranged opposite an uppersurface of said mounting means.
 6. The plasma treatment device accordingto claim 3, wherein a part surrounding said antenna in said processingchamber is formed of an insulating material.
 7. The plasma treatmentdevice according to claim 3, wherein means for introducing non-reactivegas having a pressure at least lower than atmospheric pressure isdisposed in a space defined by said antenna in said chamber and aninsulating material arranged around the periphery of said antenna. 8.The plasma treatment device according to claim 3 further comprisingtemperature detection means for detecting a temperature of saidworkpiece, temperature regulating means for regulating the temperatureof said workpiece on the basis of the temperature detected by thetemperature detection means, and refrigerant supply means for regulatingthe temperature of said antenna.
 9. The plasma treatment deviceaccording to claim 3, wherein microwaves are applied to said antenna bysaid power supply means, and the frequency of the microwaves is in therange of 400 kHz to 100 MHz.
 10. The plasma treatment device accordingto claim 3, wherein the workpiece which is mounted on the mounting meansis a semiconductor wafer of a semiconductor device, the semiconductorwafer having a surface thereof plasma-processed by the plasma generatedbetween the antenna and the semiconductor water which is disposed in thechamber opposite to the antenna, the antenna being formed integrallywith the hermetically sealed processing chamber.
 11. The plasmatreatment device according to claim 3, wherein the workpiece which ismounted on the mounting means is a semiconductor wafer of a liquidcrystal display substrate, the semiconductor wafer having a surfacethereof plasma-processed by a plasma generated between the antenna andthe semiconductor wafer which is disposed in the chamber opposite to theantenna, the antenna being formed integrally with the hermeticallysealed processing chamber.
 12. A plasma treatment device, comprising ahermetically sealed processing chamber, gas introducing means forintroducing a processing gas, attached to the processing chamber,exhaust means for exhausting the processing gas introduced into saidprocessing chamber, mounting means for mounting a workpiece, disposed insaid processing chamber, and power source means for supplying power forplasma generation, characterized in that an antenna for plasmageneration is connected to said power source means, and the antenna iscovered with an insulating material integrated with said processingchamber, wherein a shield plate comprising a conductive material isarranged between said antenna and a plasma generating space, and whereinsaid shield plate is connected to a high-frequency power source.
 13. Aplasma treatment device, comprising a hermetically sealed processingchamber, gas introducing means for introducing a processing gas,attached to the processing chamber, exhaust means for exhausting theprocessing gas introduced into said processing chamber, mounting meansfor mounting a workpiece, disposed in said processing chamber, and powersource means for supplying power for plasma generation, characterized inthat an antenna for plasma generation is connected to said power sourcemeans, and the antenna is covered with an insulating material integratedwith said processing chamber, wherein a shield plate comprising aconductive material is arranged between said antenna and a plasmagenerating space, and wherein said shield plate is connected to a DCpower source.
 14. A plasma treatment device, comprising a hermeticallysealed processing chamber, gas introducing means for introducing aprocessing gas, attached to the processing chamber, exhaust means forexhausting the processing gas introduced into said processing chamber,mounting means for mounting a workpiece, disposed in said processingchamber, and power source means for supplying power for plasmageneration, characterized in that an antenna for plasma generation isconnected to said power source means, and the antenna is covered with aninsulating material integrated with said processing chamber, and furthercomprising an insulating material covering said antenna, first detectionmeans for detecting a pressure of a space defined by the insulatingmaterial and said antenna, and second detection means for detecting apressure in the processing chamber connected to the space via acommunicating path having control means for opening and closing saidcommunication path, wherein there is disposed means for opening saidcontrol means for opening and closing said communicating path when apressure differential between the pressures detected by said first andsaid second detection means exceeds a predetermined value.
 15. A plasmatreatment device, comprising a hermetically sealed processing chamber,gas introducing means for introducing a processing gas, attached to theprocessing chamber, exhaust means for exhausting the processing gasintroduced into said processing chamber, mounting means for mounting aworkpiece, disposed in said processing chamber, and power source meansfor supplying power for plasma generation, characterized in that anantenna for plasma generation is connected to said power source means,and the antenna is covered with an insulating material integrated withsaid processing chamber, wherein a shield plate comprising a conductivematerial is arranged between said antenna and a plasma generating space,and wherein supply means for supplying non-reactive gas is disposedbetween said workpiece and said mounting means, and the supply meanssupplies the non-reactive gas for heat transfer promotion to a peripheryof said antenna.
 16. A plasma treatment device, comprising ahermetically sealed processing chamber, gas introducing means forintroducing a processing gas, attached to the processing chamber,exhaust means for exhausting the processing gas introduced into saidprocessing chamber, mounting means for mounting a workpiece, disposed insaid processing chamber, and power source means for supplying power forplasma generation, characterized in that an antenna for plasmageneration is connected to said power source means, and the antenna iscovered with an insulating material integrated with said processingchamber, wherein a shield plate comprising a conductive material isarranged between said antenna and a plasma generating space, and whereintemperature detection means for detecting a temperature of a memberplaced in a vicinity of said antenna and non-reactive gas supply meansfor supplying non-reactive gas to the vicinity of said antenna aredisposed to said member placed in the vicinity of said antenna, andpressure control means for controlling a pressure of the non-reactivegas is provided to the non-reactive gas supply means, and regulatingmeans for regulating the temperature of said member in the vicinity ofthe antenna on the basis of the pressure of the non-reactive gas and thetemperature of the member detected by said temperature detection meansis provided.